 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| igbt highspeed5igbtintrenchstop tm 5technology IGZ100N65H5 650vigbthighspeedseriesfifthgeneration datasheet industrialpowercontrol
2 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 highspeed5igbtintrenchstop tm 5technology featuresandbenefits: highspeedh5technologyoffering ?ultralowlossswitchingthankstokelvinemitterpinin combinationwithtrenchstop tm 5 ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications ?uninterruptiblepowersupplies ?weldingconverters ?midtohighrangeswitchingfrequencyconverters ?solarstringinverters packagepindefinition: ?pinc&backside-collector ?pine-emitter ?pink-kelvinemitter ?ping-gate pleasenote:theemitterandkelvinemitterpinsarenot exchangeable.theirexchangemightleadtomalfunction. keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGZ100N65H5 650v 100a 1.65v 175c g100eh5 pg-to247-4 3 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 161.0 101.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 400.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 400.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 536.0 268.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.28 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =100.0a t vj =25c t vj =100c t vj =150c - - - 1.65 1.82 1.90 2.10 - - v gate-emitter threshold voltage v ge(th) i c =1.00ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 1100.0 100.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =100.0a - 200.0 - s 1) defined by design. not subject to production test. 5 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 6560 - output capacitance c oes - 97 - reverse transfer capacitance c res - 21 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =100.0a, v ge =15v - 210.0 - nc internal emitter inductance 1) measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 30 - ns rise time t r - 9 - ns turn-off delay time t d(off) - 421 - ns fall time t f - 15 - ns turn-on energy e on - 0.85 - mj turn-off energy e off - 0.77 - mj total switching energy e ts - 1.62 - mj t vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode from ikz75n65eh5. switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 28 - ns rise time t r - 12 - ns turn-off delay time t d(off) - 468 - ns fall time t f - 17 - ns turn-on energy e on - 1.43 - mj turn-off energy e off - 0.76 - mj total switching energy e ts - 2.19 - mj t vj =150c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode from ikz75n65eh5. 1) the internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 6 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s, i cmax definedbydesign-notsubjectto production test) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 100 200 300 400 500 600 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 40 80 120 160 200 240 280 320 360 400 v ge = 20v 18v 15v 12v 10v 7v 6v 5v 4v 7 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 40 80 120 160 200 240 280 320 360 400 v ge = 20v 18v 14v 12v 9v 8v 6v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 320 360 400 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c = 25a i c = 50a i c = 100a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =18 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 50 100 150 200 250 300 1 10 100 1000 t d(off) t f t d(on) t r 8 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g(on) =8 w , r g(off) =18 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =18 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 11 12 e off e on e ts 9 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g(on) =8 w , r g(off) =18 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =50a, r g(on) =8 w , r g(off) =18 w ,dynamictest circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 225 250 275 300 325 350 375 400 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 e off e on e ts figure 16. typicalgatecharge ( i c =100a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 10 12 14 16 v ce = 130v v ce = 520v 10 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 4.7e-3 2.7e-5 2 0.056403 2.5e-4 3 0.049642 2.2e-3 4 0.154033 0.014179 5 0.012425 0.120087 6 1.7e-3 1.91251 11 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> 12 IGZ100N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief 13 IGZ100N65H5 high speed series fifth generation rev. 2.1, 2014-10-31 revision history IGZ100N65H5 previous revision revision date subjects (major changes since last revision) 1.1 2014-10-17 preliminary data sheet 2.1 2014-10-31 final data sheet ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief |
Price & Availability of IGZ100N65H5
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |